Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record efficiency values under typical satellite conditions.

Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record ...

With its Vindur CoolW@ll cooling wall system, Weiss Klimatechnik offers a proven and highly efficient solution that is ...

Delta is leveraging Infineon’s integrated power-stages — and the ultra-thin power MOSFETs inside them — to develop a vertical ...

Discover how circuit protection and sensing solutions help ensure continuous, reliable operation of low-power wearable ...

We've ranked some of the most powerful smartphone processors based on Geekbench scores, discussing key CPU specs, standout features, and ideal use cases.

DDR5 is like a super-fast upgrade from DDR4. It can move data way quicker, almost doubling the speed. It also uses a bit less ...

2018 was a wild year for digital money, a real up-and-down ride that left many scratching their heads. It felt like just ...

Transistors, the building blocks of modern electronics, are typically made of silicon. Because it's a semiconductor, this ...

The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the ...

The field of ultrafast magnetism explores how flashes of light can manipulate a material's magnetization in trillionths of a ...

There’s always some debate around what style of architecture is best for certain computing applications, with some on the ...