Nexperia has released 1200V SiC MOSFETs in QDPAK packaging with a top-side cooled surface-mount package optimised for ...

Onsemi has launched GaNEXUS, a new GaN power portfolio engineered to deliver higher efficiency, greater power density, and ...

EPC has introduced a 23mm 3-phase BLDC reference design inverter for small motor drives in humanoid wrists and hands and for ...

Witt Gas Controls, a specialist in gas safety, control, and analysis solutions, has upgraded its dome pressure regulator ...

Rohm has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation ...

Finwave’s newest RF switch additions are said to deliver expanded power handling, higher frequency operation and ultra-low ...

Sivers Semiconductors has announced an $8.2m production order for 2027 from ALL.SPACE, a multi-orbit satcomms company, for ...

Now, a team from MIT and elsewhere has broken through this bottleneck by embedding GaN transistors into an ultrathin layer of ...

Package delivers module‑like performance with greater than 6000 V integrated isolation Navitas Semiconductor has launched its ...

Engineers from the University of South Carolina are claiming to have broken the record for the forward current in Schottky ...

Atomera, a US semiconductor materials and technology licensing company, has announced a new approach to GaN-on-Silicon that ...

Following the publication of the UK Government’s AI Hardware Plan, the Compound Semiconductor Applications (CSA) Catapult ...