An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness ...

Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.

A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology ...

Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...

The ferroelectrical properties of materials have found a variety of uses over the years, including in semiconductor applications. Ferroelectric memory is among the most interesting and possibly ...

Researchers at the Tokyo Institute of Technology used pulsed laser deposition to install multiferroic BFCO onto a conductive Nb: SrTiO 3 (001) substrate, according to a study published in the journal ...

NY CREATES and Fraunhofer IPMS announced at a signing ceremony a new Joint Development Agreement (JDA) to drive research and development focused on memory devices. The JDA will leverage and link the ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...