onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
The QSTTM substrate*1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) developed, has been adopted ...
There are several characteristics when analyzing silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) capabilities for a power system. Silicon process is most familiar to designers as it has ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
Electrostatic discharge (ESD) issues in integrated circuit (IC) chip designs have become more critical at advanced semiconductor process nodes, due to shrinking transistor dimensions and oxide layer ...
Gas insulation plays a central role in the design and operation of high voltage equipment by utilising dielectric gases to prevent undesired electrical discharges and ensure reliable performance.
Central Semiconductor, manufacturer of discrete semiconductors, recently released the CMXSTB Series surface-mount stabistors packaged in the SOT-26 case. This new series consists of the 1.2-V ...
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