This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

In previous parts of this series we reviewed the basic transistor parameters that determine ac voltage gain and practical considerations limiting high gain. The role of a coupling capacitor was ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...